Energetic Phosphorus Ion Implantation in Silicon: A SRIM-Based Study of Damage Profiles and Ranges at Varying Ion Energies. Leadership, Education, Personality: An Interdisciplinary Journal, ISSN: 2524-6178, [S. l.], v. 19, n. 1, p. 1407–1414, 2025. DOI: 10.1366/f05tjj90. Disponível em: https://sibe.rpress.co.in/index.php/jimr/article/view/858.. Acesso em: 21 feb. 2026.